Part Details for IPD30N10S3L34ATMA1 by Infineon Technologies AG
Overview of IPD30N10S3L34ATMA1 by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPD30N10S3L34ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
79X1436
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Newark | Mosfet, Aec-Q101, N-Ch, 100V, To-252- 3, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:30A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IPD30N10S3L34ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 138 |
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$0.6230 / $1.4000 | Buy Now |
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DISTI #
86AK5208
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Newark | Mosfet, N-Ch, 100V, 30A, To-252 Rohs Compliant: Yes |Infineon IPD30N10S3L34ATMA1 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.5390 / $0.5790 | Buy Now |
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DISTI #
79AH3151
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Newark | Mosfet_(75V 120V( Rohs Compliant: Yes |Infineon IPD30N10S3L34ATMA1 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6000 / $0.7660 | Buy Now |
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DISTI #
IPD30N10S3L34ATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 30A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
35524 In Stock |
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$0.5182 / $1.3800 | Buy Now |
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DISTI #
726-IPD30N10S3L34ATM
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Mouser Electronics | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T RoHS: Compliant | 6605 |
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$0.5180 / $1.3100 | Buy Now |
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DISTI #
V72:2272_06390917
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Arrow Electronics | Trans MOSFET N-CH 100V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2316 Container: Cut Strips | Americas - 15 |
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$0.5554 / $0.8548 | Buy Now |
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Future Electronics | Single N-Channel 100 V 31 mOhm 31 nC OptiMOS™ Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 5000Reel |
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$0.3900 / $0.4050 | Buy Now |
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DISTI #
71240990
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Verical | Trans MOSFET N-CH 100V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 43 Package Multiple: 1 Date Code: 2307 | Americas - 2400 |
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$0.6113 / $0.7437 | Buy Now |
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DISTI #
67565237
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Verical | Trans MOSFET N-CH 100V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 11 Package Multiple: 1 Date Code: 2316 | Americas - 15 |
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$0.5554 / $0.7385 | Buy Now |
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Quest Components | 3840 |
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$0.3927 / $1.7850 | Buy Now |
Part Details for IPD30N10S3L34ATMA1
IPD30N10S3L34ATMA1 CAD Models
IPD30N10S3L34ATMA1 Part Data Attributes:
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IPD30N10S3L34ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD30N10S3L34ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 138 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0418 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 68 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 57 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Reference Standard | AEC-Q101; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD30N10S3L34ATMA1
This table gives cross-reference parts and alternative options found for IPD30N10S3L34ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD30N10S3L34ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK3647-01 | Power Field-Effect Transistor, 30A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN | Fuji Electric Co Ltd | IPD30N10S3L34ATMA1 vs 2SK3647-01 |
| 934055808127 | TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | NXP Semiconductors | IPD30N10S3L34ATMA1 vs 934055808127 |
| HUF75631S3S | 33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | IPD30N10S3L34ATMA1 vs HUF75631S3S |
| IRF540NSHR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2 | International Rectifier | IPD30N10S3L34ATMA1 vs IRF540NSHR |
| NTE2930 | Power Field-Effect Transistor, 31A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | NTE Electronics Inc | IPD30N10S3L34ATMA1 vs NTE2930 |