IPD30N10S3L34ATMA1 vs 934055808127 feature comparison

IPD30N10S3L34ATMA1 Infineon Technologies AG

Buy Now Datasheet

934055808127 NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 138 mJ 170 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 30 A 35 A
Drain-source On Resistance-Max 0.0418 Ω 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 68 pF
JEDEC-95 Code TO-252 TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 57 W
Pulsed Drain Current-Max (IDM) 120 A 140 A
Reference Standard AEC-Q101; IEC-68-1
Surface Mount YES NO
Terminal Finish Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code TO-220AB
Pin Count 3
Qualification Status Not Qualified
Transistor Application SWITCHING

Compare IPD30N10S3L34ATMA1 with alternatives

Compare 934055808127 with alternatives