IPB80N06S2L06XT
vs
IPB80N06S2L06ATMA1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
GREEN, PLASTIC, TO-263, 3 PIN
GREEN, PLASTIC, TO-263, 3 PIN
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
kg CO2e/kg
8.8
8.8
Average Weight (mg)
1603.75
1603.75
CO2e (mg)
14113
14113
Category CO2 Kg
8.8
8.8
Additional Feature
LOGIC LEVEL COMPATIBLE
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
530 mJ
530 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
55 V
Drain Current-Max (ID)
80 A
80 A
Drain-source On Resistance-Max
0.0084 Ω
0.0084 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
320 A
320 A
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Samacsys Description
IPB80N06S2L06ATMA1 N-Channel MOSFET, 80 A, 55 V OptiMOS, 3-Pin D2PAK Infineon
Samacsys Manufacturer
Infineon
Samacsys Modified On
2020-11-30 19:47:12
Compare IPB80N06S2L06XT with alternatives
Compare IPB80N06S2L06ATMA1 with alternatives