Part Details for IPB80N06S2L06XT by Infineon Technologies AG
Overview of IPB80N06S2L06XT by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IPB80N06S2L06XT
IPB80N06S2L06XT CAD Models
IPB80N06S2L06XT Part Data Attributes
|
|
IPB80N06S2L06XT
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB80N06S2L06XT
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 530 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0084 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB80N06S2L06XT
This table gives cross-reference parts and alternative options found for IPB80N06S2L06XT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB80N06S2L06XT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2L06ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB80N06S2L06XT vs IPB80N06S2L06ATMA1 |
| IPB80N06S2L-06 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB80N06S2L06XT vs IPB80N06S2L-06 |
| STB85NF55T4 | STMicroelectronics | Check for Price | Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET II Power MOSFET in D2PAK package | IPB80N06S2L06XT vs STB85NF55T4 |
| STP85NF55 | STMicroelectronics | Check for Price | Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET(TM) II Power MOSFET in TO-220 package | IPB80N06S2L06XT vs STP85NF55 |
| IPP80N06S2L06AKSA2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPB80N06S2L06XT vs IPP80N06S2L06AKSA2 |
| SPB80N06S-08 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB80N06S2L06XT vs SPB80N06S-08 |
| SP0000-84809 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor | IPB80N06S2L06XT vs SP0000-84809 |
| SPI80N06S08AKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | IPB80N06S2L06XT vs SPI80N06S08AKSA1 |
| STB85NF55 | STMicroelectronics | Check for Price | 80A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | IPB80N06S2L06XT vs STB85NF55 |
| STB140NF55T4 | STMicroelectronics | $1.1425 | N-CHANNEL 55V 0.0065 OHM 80A D2PAK STRIPFET II MOSFET | IPB80N06S2L06XT vs STB140NF55T4 |