IPB80N06S2L06ATMA1
vs
STB85NF55L
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
STMICROELECTRONICS
Package Description
GREEN, PLASTIC, TO-263, 3 PIN
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
LOGIC LEVEL COMPATIBLE
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
530 mJ
980 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
55 V
Drain Current-Max (ID)
80 A
80 A
Drain-source On Resistance-Max
0.0084 Ω
0.01 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
320 A
320 A
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Rohs Code
Part Package Code
D2PAK
Pin Count
4
JESD-609 Code
e3
Operating Temperature-Max
175 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max (Abs)
300 W
Qualification Status
Not Qualified
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Compare IPB80N06S2L06ATMA1 with alternatives
Compare STB85NF55L with alternatives