HN62331AP vs 28C010TRT4DS-12 feature comparison

HN62331AP Hitachi Ltd

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28C010TRT4DS-12 Data Device Corporation

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Rohs Code No
Part Life Cycle Code Transferred Active
Ihs Manufacturer HITACHI LTD DATA DEVICE CORP
Part Package Code DIP
Package Description DIP, DIP32,.6 DIP-32
Pin Count 32
Reach Compliance Code unknown compliant
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.71 8542.32.00.51
Access Time-Max 120 ns 120 ns
JESD-30 Code R-PDIP-T32 R-XDIP-T32
JESD-609 Code e0
Length 41.9 mm 40.64 mm
Memory Density 1048576 bit 1048576 bit
Memory IC Type MASK ROM EEPROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 128KX8 128KX8
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIP DIP
Package Equivalence Code DIP32,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 5.08 mm 5.715 mm
Standby Current-Max 0.00003 A
Supply Current-Max 0.05 mA 0.05 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Width 15.24 mm 15.24 mm
Base Number Matches 2 2
Programming Voltage 5 V
Total Dose 40k Rad(Si) V
Write Cycle Time-Max (tWC) 10 ms

Compare HN62331AP with alternatives

Compare 28C010TRT4DS-12 with alternatives