GS8162Z18DD-250V vs K7M163645A-FC200 feature comparison

GS8162Z18DD-250V GSI Technology

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K7M163645A-FC200 Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GSI TECHNOLOGY SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description LBGA, LBGA,
Pin Count 165 165
Reach Compliance Code compliant compliant
ECCN Code 3A991.B.2.B 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Factory Lead Time 24 Weeks
Access Time-Max 5.5 ns
Additional Feature FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY PIPELINED ARCHITECTURE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
Length 15 mm 15 mm
Memory Density 18874368 bit 18874368 bit
Memory IC Type ZBT SRAM ZBT SRAM
Memory Width 18 36
Number of Functions 1 1
Number of Terminals 165 165
Number of Words 1048576 words 524288 words
Number of Words Code 1000000 512000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 1MX18 512KX36
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA LBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.4 mm 1.4 mm
Supply Voltage-Max (Vsup) 2 V 3.465 V
Supply Voltage-Min (Vsup) 1.7 V 3.135 V
Supply Voltage-Nom (Vsup) 1.8 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 13 mm 13 mm
Base Number Matches 1 1
JESD-609 Code e0
Terminal Finish TIN LEAD

Compare GS8162Z18DD-250V with alternatives

Compare K7M163645A-FC200 with alternatives