BLF6G27LS-135
vs
934065321112
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
Package Description |
ROHS COMPLIANT, CERAMIC PACKAGE-3
|
ROHS COMPLIANT, CERAMIC PACKAGE-4
|
Pin Count |
3
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
SOURCE
|
SOURCE
|
Configuration |
SINGLE
|
COMMON SOURCE, 2 ELEMENTS
|
DS Breakdown Voltage-Min |
65 V
|
65 V
|
Drain Current-Max (ID) |
34 A
|
15.5 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Highest Frequency Band |
S BAND
|
S BAND
|
JESD-30 Code |
R-CDFP-F2
|
R-CDFP-F4
|
Number of Elements |
1
|
2
|
Number of Terminals |
2
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
200 °C
|
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLATPACK
|
FLATPACK
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
1
|
|
|
|
Compare BLF6G27LS-135 with alternatives
Compare 934065321112 with alternatives