Datasheets
934065321112 by: NXP Semiconductors

2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET

Part Details for 934065321112 by NXP Semiconductors

Overview of 934065321112 by NXP Semiconductors

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Applications Internet of Things (IoT) Environmental Monitoring Industrial Automation Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for 934065321112

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934065321112 Part Data Attributes:

934065321112 NXP Semiconductors
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934065321112 NXP Semiconductors 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Part Life Cycle Code Active
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 15.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDFP-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for 934065321112

This table gives cross-reference parts and alternative options found for 934065321112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934065321112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
934065321118 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET NXP Semiconductors 934065321112 vs 934065321118
BLF6G27LS-40P RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4 Ampleon 934065321112 vs BLF6G27LS-40P
Part Number Description Manufacturer Compare
BLF6G27-135 TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power NXP Semiconductors 934065321112 vs BLF6G27-135
934060908112 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2 NXP Semiconductors 934065321112 vs 934060908112
934065319112 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-4 NXP Semiconductors 934065321112 vs 934065319112
934060908135 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2 NXP Semiconductors 934065321112 vs 934060908135
BLF6G27L-40P 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-4 NXP Semiconductors 934065321112 vs BLF6G27L-40P
BLF6G27LS-135 TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power NXP Semiconductors 934065321112 vs BLF6G27LS-135
BLF6G27S-45 RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon 934065321112 vs BLF6G27S-45
934060912135 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2 NXP Semiconductors 934065321112 vs 934060912135
BLF6G27S-45,112 RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon 934065321112 vs BLF6G27S-45,112
BLF6G27-45,112 BLF6G27-45 NXP Semiconductors 934065321112 vs BLF6G27-45,112

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