934065321112
vs
BLF6G27-135
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
ROHS COMPLIANT, CERAMIC PACKAGE-4
|
ROHS COMPLIANT, CERAMIC PACKAGE-3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
COMMON SOURCE, 2 ELEMENTS
|
SINGLE
|
| DS Breakdown Voltage-Min |
65 V
|
65 V
|
| Drain Current-Max (ID) |
15.5 A
|
34 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Highest Frequency Band |
S BAND
|
S BAND
|
| JESD-30 Code |
R-CDFP-F4
|
R-CDFM-F2
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
4
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLATPACK
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Pin Count |
|
3
|
| Operating Temperature-Max |
|
200 °C
|
| Peak Reflow Temperature (Cel) |
|
245
|
| Qualification Status |
|
Not Qualified
|
| Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare 934065321112 with alternatives
Compare BLF6G27-135 with alternatives