B5819W vs 1N5819W feature comparison

B5819W Galaxy Microelectronics

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1N5819W Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code SOD-123
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.6 V
JESD-30 Code R-PDSO-C2 R-PDSO-F2
Non-rep Pk Forward Current-Max 25 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 150 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Rep Pk Reverse Voltage-Max 40 V 40 V
Surface Mount YES YES
Technology SCHOTTKY SCHOTTKY
Terminal Form C BEND FLAT
Terminal Position DUAL DUAL
Base Number Matches 14 5
HTS Code 8541.10.00.80
Additional Feature LOW POWER LOSS
Application GENERAL PURPOSE
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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