5962L0052401VZA
vs
LM111J-8RLQMLV
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
NATIONAL SEMICONDUCTOR CORP
Part Package Code
SOIC
DIP
Package Description
SOP, SOP10,.4
DIP, DIP8,.3
Pin Count
10
8
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.39.00.01
8542.39.00.01
Amplifier Type
COMPARATOR
COMPARATOR
Average Bias Current-Max (IIB)
0.15 µA
0.15 µA
Bias Current-Max (IIB) @25C
100 µA
0.1 µA
Input Offset Voltage-Max
4000 µV
4000 µV
JESD-30 Code
R-GDSO-G10
R-GDIP-T8
Moisture Sensitivity Level
1
1
Neg Supply Voltage Limit-Max
-18 V
-18 V
Neg Supply Voltage-Nom (Vsup)
-15 V
-15 V
Number of Functions
1
1
Number of Terminals
10
8
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Type
OPEN-COLLECTOR
OPEN-COLLECTOR
Package Body Material
CERAMIC, GLASS-SEALED
CERAMIC, GLASS-SEALED
Package Code
SOP
DIP
Package Equivalence Code
SOP10,.4
DIP8,.3
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Qualification Status
Not Qualified
Not Qualified
Response Time-Nom
200 ns
200 ns
Screening Level
MIL-PRF-38535 Class V
MIL-PRF-38535 Class V
Seated Height-Max
2.33 mm
5.08 mm
Supply Current-Max
7 mA
6 mA
Supply Voltage Limit-Max
18 V
18 V
Supply Voltage-Nom (Vsup)
15 V
15 V
Surface Mount
YES
NO
Technology
BIPOLAR
BIPOLAR
Temperature Grade
MILITARY
MILITARY
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Pitch
1.27 mm
2.54 mm
Terminal Position
DUAL
DUAL
Total Dose
50k Rad(Si) V
50k Rad(Si) V
Width
6.12 mm
7.62 mm
Base Number Matches
1
1
JESD-609 Code
e0
Peak Reflow Temperature (Cel)
260
Terminal Finish
Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s)
40
Compare 5962L0052401VZA with alternatives
Compare LM111J-8RLQMLV with alternatives