JANTX2N6792
vs
JANTXV2N6792
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Contact Manufacturer
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
SEMICOA CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
2 A
2 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
20 W
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Base Number Matches
6
5
Package Description
CYLINDRICAL, O-MBCY-W3
Avalanche Energy Rating (Eas)
0.242 mJ
DS Breakdown Voltage-Min
400 V
Drain-source On Resistance-Max
1.9 Ω
JEDEC-95 Code
TO-205AF
JESD-30 Code
O-MBCY-W3
Number of Terminals
3
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Pulsed Drain Current-Max (IDM)
10 A
Qualification Status
Not Qualified
Reference Standard
MIL-19500
Terminal Form
WIRE
Terminal Position
BOTTOM
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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