2N6792TXV
vs
2N6792PBF
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INTERNATIONAL RECTIFIER CORP
Package Description
CYLINDRICAL, O-MBCY-W3
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
RADIATION HARDENED
AVALANCHE RATED
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
2 A
2 A
Drain-source On Resistance-Max
1.8 Ω
1.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
10 A
10 A
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MILITARY STANDARD (USA)
MILITARY STANDARD (USA)
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
4
1
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
0.19 mJ
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
20 W
Time@Peak Reflow Temperature-Max (s)
40
Turn-off Time-Max (toff)
95 ns
Turn-on Time-Max (ton)
75 ns
Compare 2N6792TXV with alternatives
Compare 2N6792PBF with alternatives