2N6792TX
vs
2N6792TXV
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
FAIRCHILD SEMICONDUCTOR CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
RADIATION HARDENED
|
RADIATION HARDENED
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
400 V
|
400 V
|
| Drain Current-Max (ID) |
2 A
|
2 A
|
| Drain-source On Resistance-Max |
1.8 Ω
|
1.8 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
10 A
|
10 A
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Reference Standard |
MILITARY STANDARD (USA)
|
MILITARY STANDARD (USA)
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
4
|
| Package Description |
|
CYLINDRICAL, O-MBCY-W3
|
| ECCN Code |
|
EAR99
|
|
|
|
Compare 2N6792TX with alternatives
Compare 2N6792TXV with alternatives