2N3028E3
vs
BT151F-650
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
NXP SEMICONDUCTORS
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
FLANGE MOUNT, R-PSFM-T3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.30.00.80
|
8541.30.00.80
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Gate Trigger Current-Max |
0.2 mA
|
15 mA
|
| JEDEC-95 Code |
TO-18
|
|
| JESD-30 Code |
O-MBCY-W3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
125 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
FLANGE MOUNT
|
| RMS On-state Current-Max |
0.785 A
|
9 A
|
| Repetitive Peak Off-state Voltage |
60 V
|
650 V
|
| Repetitive Peak Reverse Voltage |
60 V
|
650 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Trigger Device Type |
SCR
|
SCR
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
3
|
| Case Connection |
|
ISOLATED
|
| Circuit Commutated Turn-off Time-Nom |
|
70 µs
|
| Critical Rate of Rise of Off-State Voltage-Min |
|
50 V/us
|
| DC Gate Trigger Voltage-Max |
|
1.5 V
|
| Holding Current-Max |
|
20 mA
|
| Leakage Current-Max |
|
0.5 mA
|
| Non-Repetitive Pk On-state Cur |
|
100 A
|
| On-state Current-Max |
|
5700 A
|
| Qualification Status |
|
Not Qualified
|
| Repetitive Peak Off-state Leakage Current-Max |
|
500 µA
|
|
|
|
Compare 2N3028E3 with alternatives
Compare BT151F-650 with alternatives