Datasheets
2N3028E3 by: Microsemi Corporation

Silicon Controlled Rectifier, 0.785A I(T)RMS, 60V V(DRM), 60V V(RRM), 1 Element, TO-18

Part Details for 2N3028E3 by Microsemi Corporation

Overview of 2N3028E3 by Microsemi Corporation

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Applications Consumer Electronics Audio and Video Systems

Part Details for 2N3028E3

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2N3028E3 Part Data Attributes:

2N3028E3 Microsemi Corporation
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2N3028E3 Microsemi Corporation Silicon Controlled Rectifier, 0.785A I(T)RMS, 60V V(DRM), 60V V(RRM), 1 Element, TO-18
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Package Description CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.30.00.80
Configuration SINGLE
DC Gate Trigger Current-Max 0.2 mA
JEDEC-95 Code TO-18
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
RMS On-state Current-Max 0.785 A
Repetitive Peak Off-state Voltage 60 V
Repetitive Peak Reverse Voltage 60 V
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Trigger Device Type SCR

Alternate Parts for 2N3028E3

This table gives cross-reference parts and alternative options found for 2N3028E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3028E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N3028 Silicon Controlled Rectifier, 0.785A I(T)RMS, 60V V(DRM), 60V V(RRM), 1 Element, TO-18 Microsemi Corporation 2N3028E3 vs 2N3028
JAN2N3028 Silicon Controlled Rectifier, 0.785A I(T)RMS, 500mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-18, Unitrode Corp (RETIRED) 2N3028E3 vs JAN2N3028
JANTX2N3028 Silicon Controlled Rectifier, 0.785A I(T)RMS, 60V V(DRM), 60V V(RRM), 1 Element, TO-18 Microsemi Corporation 2N3028E3 vs JANTX2N3028
JANTX2N3028 Silicon Controlled Rectifier, 0.785A I(T)RMS, 500mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-18, Unitrode Corp (RETIRED) 2N3028E3 vs JANTX2N3028
Part Number Description Manufacturer Compare
IS212 Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Hutson Industries 2N3028E3 vs IS212
NTE5511 Silicon Controlled Rectifier, 5.024A I(T)RMS, 5000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-66, NTE Electronics Inc 2N3028E3 vs NTE5511
2N1778 Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 500V V(DRM), 500V V(RRM), 1 Element, TO-64, Semitronics Corp 2N3028E3 vs 2N1778
T106D21 Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-202AB, TO-202AB, 3 PIN Littelfuse Inc 2N3028E3 vs T106D21
BT151F-650 Silicon Controlled Rectifier, 9 A, 650 V, SCR, PLASTIC PACKAGE-3 NXP Semiconductors 2N3028E3 vs BT151F-650
C122A1 8A, 100V, SCR, TO-220AB Motorola Mobility LLC 2N3028E3 vs C122A1
CR3PM-8 Silicon Controlled Rectifier, 4.71A I(T)RMS, 3000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, TO-220F, 3 PIN Mitsubishi Electric 2N3028E3 vs CR3PM-8
CS220-12P Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-220AB, Central Semiconductor Corp 2N3028E3 vs CS220-12P
S207D1 Silicon Controlled Rectifier, 6A I(T)RMS, 6000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-202 Hutson Industries 2N3028E3 vs S207D1
BT151S-650R/T3 Silicon Controlled Rectifier, 12 A, 650 V, SCR, TO-252AA, PLASTIC, SC-63, DPAK-3 NXP Semiconductors 2N3028E3 vs BT151S-650R/T3

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