2N2386 vs IFN5116 feature comparison

2N2386 Texas Instruments

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IFN5116 InterFET Corporation

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Rohs Code No
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TEXAS INSTRUMENTS INC INTER F E T CORP
Package Description CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Case Connection GATE GATE
Configuration SINGLE SINGLE
FET Technology JUNCTION JUNCTION
JEDEC-95 Code TO-5 TO-18
JESD-30 Code O-MBCY-W3 O-MBCY-W3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode DEPLETION MODE DEPLETION MODE
Operating Temperature-Max 200 °C 150 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Drain-source On Resistance-Max 150 Ω
Feedback Cap-Max (Crss) 7 pF

Compare 2N2386 with alternatives

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