2N2386
vs
JANTXV2N5116
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SPACE POWER ELECTRONICS INC
|
VPT COMPONENTS
|
| Part Package Code |
TO-5
|
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
SIMILAR TO TO-18, 3 PIN
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| FET Technology |
JUNCTION
|
JUNCTION
|
| JEDEC-95 Code |
TO-5
|
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| JESD-609 Code |
e0
|
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.5 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
7
|
5
|
| HTS Code |
|
8541.21.00.95
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Case Connection |
|
GATE
|
| Configuration |
|
SINGLE
|
| DS Breakdown Voltage-Min |
|
30 V
|
| Drain-source On Resistance-Max |
|
175 Ω
|
| Feedback Cap-Max (Crss) |
|
7 pF
|
| Number of Elements |
|
1
|
| Operating Temperature-Min |
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation Ambient-Max |
|
0.5 W
|
| Reference Standard |
|
MIL-19500
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare 2N2386 with alternatives
Compare JANTXV2N5116 with alternatives