2N2386
vs
2N3329
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SOLITRON DEVICES INC
|
ASI SEMICONDUCTOR INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| FET Technology |
JUNCTION
|
JUNCTION
|
| JEDEC-95 Code |
TO-5
|
TO-72
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
4
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.5 W
|
0.3 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
7
|
6
|
| Package Description |
|
CYLINDRICAL, O-MBCY-W4
|
| Additional Feature |
|
LOW NOISE
|
| DS Breakdown Voltage-Min |
|
10 V
|
| Drain Current-Max (ID) |
|
0.01 A
|
| Drain-source On Resistance-Max |
|
1000 Ω
|
| Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare 2N2386 with alternatives
Compare 2N3329 with alternatives