1T359
vs
JDV2S14E
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Not Recommended
Ihs Manufacturer
SONY CORP
TOSHIBA CORP
Package Description
R-PDSO-F2
R-PDSO-F2
Pin Count
2
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
30 V
Configuration
SINGLE
SINGLE
Diode Capacitance-Nom
29.5 pF
60.5 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 Code
R-PDSO-F2
R-PDSO-F2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
85 °C
125 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
35 V
10 V
Reverse Current-Max
0.02 µA
Reverse Test Voltage
28 V
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Variable Capacitance Diode Classification
ABRUPT
ABRUPT
Base Number Matches
1
1
Part Package Code
SOD
Samacsys Manufacturer
Toshiba
Diode Cap Tolerance
6.94%
Diode Capacitance Ratio-Min
1.25
Compare 1T359 with alternatives
Compare JDV2S14E with alternatives