1T359 vs JDV2S14E feature comparison

1T359 Sony Semiconductor

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JDV2S14E Toshiba America Electronic Components

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer SONY CORP TOSHIBA CORP
Package Description R-PDSO-F2 R-PDSO-F2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 30 V
Configuration SINGLE SINGLE
Diode Capacitance-Nom 29.5 pF 60.5 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 85 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 35 V 10 V
Reverse Current-Max 0.02 µA
Reverse Test Voltage 28 V
Surface Mount YES YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
Part Package Code SOD
Samacsys Manufacturer Toshiba
Diode Cap Tolerance 6.94%
Diode Capacitance Ratio-Min 1.25

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