1SV214TPHR4 vs BB833E6327 feature comparison

1SV214TPHR4 Toshiba America Electronic Components

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BB833E6327 Infineon Technologies AG

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP INFINEON TECHNOLOGIES AG
Package Description R-PDSO-G2 SOD-323, 2 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE
Breakdown Voltage-Min 30 V
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 5.9 11
Diode Capacitance-Nom 15.21 pF 9.3 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY S BAND
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.01 µA
Reverse Test Voltage 28 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 3
Pbfree Code Yes
Rohs Code Yes
Part Package Code SOD
Pin Count 2
Manufacturer Package Code SOD-323
Samacsys Manufacturer Infineon
Diode Cap Tolerance 8.11%
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 35 V
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 40

Compare 1SV214TPHR4 with alternatives

Compare BB833E6327 with alternatives