1SV214TPHR4 vs 1T359 feature comparison

1SV214TPHR4 Toshiba America Electronic Components

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1T359 Sony Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP SONY CORP
Package Description R-PDSO-G2 R-PDSO-F2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE
Breakdown Voltage-Min 30 V 30 V
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 5.9
Diode Capacitance-Nom 15.21 pF 29.5 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 Code R-PDSO-G2 R-PDSO-F2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 85 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.01 µA 0.02 µA
Reverse Test Voltage 28 V 28 V
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
Pbfree Code No
Rohs Code No
Pin Count 2
JESD-609 Code e0
Rep Pk Reverse Voltage-Max 35 V
Terminal Finish TIN LEAD

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