1N6461
vs
P6SMB11AHM3_A/I
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SEMICON COMPONENTS INC
|
VISHAY INTERTECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Nom |
5.6 V
|
11.05 V
|
| Clamping Voltage-Max |
9 V
|
15.6 V
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-609 Code |
e0
|
e3
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Rep Pk Reverse Voltage-Max |
5 V
|
9.4 V
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn)
|
| Base Number Matches |
9
|
1
|
| Package Description |
|
SMB, 2 PIN
|
| Date Of Intro |
|
2019-02-07
|
| Additional Feature |
|
EXCELLENT CLAMPING CAPABILITY
|
| Breakdown Voltage-Max |
|
11.6 V
|
| Breakdown Voltage-Min |
|
10.5 V
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| Forward Voltage-Max (VF) |
|
3.5 V
|
| JEDEC-95 Code |
|
DO-214AA
|
| JESD-30 Code |
|
R-PDSO-C2
|
| Moisture Sensitivity Level |
|
1
|
| Non-rep Peak Rev Power Dis-Max |
|
600 W
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max |
|
5 W
|
| Reference Standard |
|
AEC-Q101
|
| Reverse Current-Max |
|
5 µA
|
| Reverse Test Voltage |
|
9.4 V
|
| Technology |
|
AVALANCHE
|
| Terminal Form |
|
C BEND
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare 1N6461 with alternatives
Compare P6SMB11AHM3_A/I with alternatives