1N6461 vs P4KE68CAHR1G feature comparison

1N6461 Microsemi Corporation

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P4KE68CAHR1G Taiwan Semiconductor

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
Package Description HERMETIC SEALED, GLASS PACKAGE-2 DO-41, 2 PIN
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 1 V
JESD-30 Code O-LALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Pk Forward Current-Max 3 A
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 0.15 A
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 300 V 58.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 1
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 71.4 V
Breakdown Voltage-Min 64.6 V
Breakdown Voltage-Nom 68 V
Clamping Voltage-Max 92 V
JEDEC-95 Code DO-204AL
Non-rep Peak Rev Power Dis-Max 400 W
Power Dissipation-Max 1 W
Reference Standard AEC-Q101; UL RECOGNIZED

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