1N6461
vs
BZW04-58BB0
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
TAIWAN SEMICONDUCTOR CO LTD
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
O-PALF-W2
Pin Count
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
1 V
JESD-30 Code
O-LALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Pk Forward Current-Max
3 A
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
0.15 A
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
300 V
58.1 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
1
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max
71.4 V
Breakdown Voltage-Min
64.6 V
Breakdown Voltage-Nom
68 V
Clamping Voltage-Max
92 V
JEDEC-95 Code
DO-204AL
Non-rep Peak Rev Power Dis-Max
400 W
Power Dissipation-Max
1 W
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