Parametric results for: irfd112 under Power Field-Effect Transistors
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IRFD112R
Thomson Consumer Electronics
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 800 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | e0 | 150 °C | Tin/Lead (Sn/Pb) | THOMSON CONSUMER ELECTRONICS | , | unknown | EAR99 | ||||||||||||||||||||||
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IRFD112
Intersil Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 800 mA | 800 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | R-XDIP-T4 | e0 | 150 °C | -55 °C | DRAIN | UNSPECIFIED | RECTANGULAR | IN-LINE | Tin/Lead (Sn/Pb) | THROUGH-HOLE | DUAL | INTERSIL CORP | not_compliant | EAR99 | ||||||||||
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IRFD112
International Rectifier
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE | 4 | 1 | 800 mA | 800 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SILICON | R-PDIP-T4 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | DUAL | INTERNATIONAL RECTIFIER CORP | DIP-4 | compliant | EAR99 | DIP | 4 | ||||||||||
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IRFD112
Harris Semiconductor
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 800 mA | 800 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | R-PDIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | DUAL | HARRIS SEMICONDUCTOR | unknown | EAR99 | ||||||||||
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IRFD112
Rochester Electronics LLC
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Check for Price | No | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 800 mA | 800 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDIP-T3 | e0 | COMMERCIAL | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | DUAL | ROCHESTER ELECTRONICS LLC | unknown | |||||||||
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IRFD112R
Harris Semiconductor
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 800 mA | 800 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | R-PDIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | DUAL | HARRIS SEMICONDUCTOR | IN-LINE, R-PDIP-T3 | unknown | EAR99 | |||||||||
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IRFD112R
Intersil Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 800 mA | 800 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | R-PDIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | DUAL | INTERSIL CORP | not_compliant | EAR99 | ||||||||||
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IRFD112
Thomson Consumer Electronics
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 800 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | e0 | 150 °C | Tin/Lead (Sn/Pb) | THOMSON CONSUMER ELECTRONICS | unknown | EAR99 |