Datasheets
IRFD112 by:

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4

Part Details for IRFD112 by International Rectifier

Overview of IRFD112 by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRFD112

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IRFD112 Part Data Attributes:

IRFD112 International Rectifier
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IRFD112 International Rectifier Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code DIP
Package Description DIP-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 0.8 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for IRFD112

This table gives cross-reference parts and alternative options found for IRFD112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK940 TRANSISTOR 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92MOD, 3 PIN, FET General Purpose Small Signal Toshiba America Electronic Components IRFD112 vs 2SK940
SI1031R-T1-GE3 Small Signal Field-Effect Transistor, 0.14A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN Vishay Intertechnologies IRFD112 vs SI1031R-T1-GE3
RSR025N03TL Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN ROHM Semiconductor IRFD112 vs RSR025N03TL
VN1310N3P005 Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc IRFD112 vs VN1310N3P005
BS107RLRF Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Motorola Semiconductor Products IRFD112 vs BS107RLRF
BS170 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92-18RM, 3 PIN Vishay Siliconix IRFD112 vs BS170
MPF4861 30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 Motorola Mobility LLC IRFD112 vs MPF4861
BS107RLRA 250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA, CASE 29-11, TO-92, 3 PIN onsemi IRFD112 vs BS107RLRA
2N7002/T3 TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal NXP Semiconductors IRFD112 vs 2N7002/T3
ZVNL120A Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Zetex / Diodes Inc IRFD112 vs ZVNL120A

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