Part Details for IRFD112 by International Rectifier
Overview of IRFD112 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFD112
IRFD112 CAD Models
IRFD112 Part Data Attributes:
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IRFD112
International Rectifier
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Datasheet
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IRFD112
International Rectifier
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | DIP | |
Package Description | DIP-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 0.8 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T4 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for IRFD112
This table gives cross-reference parts and alternative options found for IRFD112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SK940 | TRANSISTOR 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92MOD, 3 PIN, FET General Purpose Small Signal | Toshiba America Electronic Components | IRFD112 vs 2SK940 |
SI1031R-T1-GE3 | Small Signal Field-Effect Transistor, 0.14A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN | Vishay Intertechnologies | IRFD112 vs SI1031R-T1-GE3 |
RSR025N03TL | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN | ROHM Semiconductor | IRFD112 vs RSR025N03TL |
VN1310N3P005 | Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | IRFD112 vs VN1310N3P005 |
BS107RLRF | Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Motorola Semiconductor Products | IRFD112 vs BS107RLRF |
BS170 | Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92-18RM, 3 PIN | Vishay Siliconix | IRFD112 vs BS170 |
MPF4861 | 30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 | Motorola Mobility LLC | IRFD112 vs MPF4861 |
BS107RLRA | 250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA, CASE 29-11, TO-92, 3 PIN | onsemi | IRFD112 vs BS107RLRA |
2N7002/T3 | TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | NXP Semiconductors | IRFD112 vs 2N7002/T3 |
ZVNL120A | Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Zetex / Diodes Inc | IRFD112 vs ZVNL120A |