Part Details for IRFD112R by Harris Semiconductor
Overview of IRFD112R by Harris Semiconductor
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for IRFD112R
IRFD112R CAD Models
IRFD112R Part Data Attributes:
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IRFD112R
Harris Semiconductor
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Datasheet
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IRFD112R
Harris Semiconductor
Small Signal Field-Effect Transistor, 0.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | IN-LINE, R-PDIP-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 0.8 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |