Datasheets
R5009FNX by:

Power Field-Effect Transistor, 9A I(D), 500V, 0.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN

Part Details for R5009FNX by ROHM Semiconductor

Overview of R5009FNX by ROHM Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Space Technology Industrial Automation Financial Technology (Fintech) Smart Cities Transportation and Logistics Energy and Power Systems Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Automotive Consumer Electronics Education and Research Security and Surveillance Audio and Video Systems Computing and Data Storage Aerospace and Defense Healthcare Renewable Energy Electronic Manufacturing Communication and Networking Robotics and Drones

Price & Stock for R5009FNX

Part # Distributor Description Stock Price Buy
DISTI # R5009FNX-ND
DigiKey MOSFET N-CH 500V 9A TO220FM Lead time: 23 Weeks Container: Bulk Temporarily Out of Stock
Buy Now
DISTI # 755-R5009FNX
Mouser Electronics MOSFET Trans MOSFET N-CH 500V 9A RoHS: Compliant 0
Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Bulk 0
Bulk
  • 500 $1.5400
$1.5400 Buy Now
DISTI # 36542400
Verical Trans MOSFET N-CH Si 500V 9A 3-Pin(3+Tab) TO-220FM Bulk RoHS: Compliant Min Qty: 33 Package Multiple: 1 Americas - 98
  • 33 $2.2863
  • 50 $2.1992
$2.1992 / $2.2863 Buy Now
Quest Components   78
  • 1 $3.8880
  • 9 $2.8512
  • 27 $2.5920
$2.5920 / $3.8880 Buy Now

Part Details for R5009FNX

R5009FNX CAD Models

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R5009FNX Part Data Attributes:

R5009FNX ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R5009FNX ROHM Semiconductor Power Field-Effect Transistor, 9A I(D), 500V, 0.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ROHM CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 5.4 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.84 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 36 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for R5009FNX

This table gives cross-reference parts and alternative options found for R5009FNX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R5009FNX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQPF9N50CYDTU Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Fairchild Semiconductor Corporation R5009FNX vs FQPF9N50CYDTU
9N50G-TF3-T Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN Unisonic Technologies Co Ltd R5009FNX vs 9N50G-TF3-T
SIHF8N50D-E3 Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Intertechnologies R5009FNX vs SIHF8N50D-E3
SIHF8N50D-E3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix R5009FNX vs SIHF8N50D-E3
9N50L-TF3-T Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Unisonic Technologies Co Ltd R5009FNX vs 9N50L-TF3-T

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