Part Details for R5009FNX by ROHM Semiconductor
Overview of R5009FNX by ROHM Semiconductor
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for R5009FNX
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
R5009FNX-ND
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DigiKey | MOSFET N-CH 500V 9A TO220FM Lead time: 23 Weeks Container: Bulk | Temporarily Out of Stock |
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Buy Now | |
DISTI #
755-R5009FNX
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Mouser Electronics | MOSFET Trans MOSFET N-CH 500V 9A RoHS: Compliant | 0 |
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Order Now | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Bulk | 0Bulk |
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$1.5400 | Buy Now |
DISTI #
36542400
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Verical | Trans MOSFET N-CH Si 500V 9A 3-Pin(3+Tab) TO-220FM Bulk RoHS: Compliant Min Qty: 33 Package Multiple: 1 | Americas - 98 |
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$2.1992 / $2.2863 | Buy Now |
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Quest Components | 78 |
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$2.5920 / $3.8880 | Buy Now |
Part Details for R5009FNX
R5009FNX CAD Models
R5009FNX Part Data Attributes:
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R5009FNX
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R5009FNX
ROHM Semiconductor
Power Field-Effect Transistor, 9A I(D), 500V, 0.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 5.4 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.84 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 36 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for R5009FNX
This table gives cross-reference parts and alternative options found for R5009FNX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R5009FNX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQPF9N50CYDTU | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | R5009FNX vs FQPF9N50CYDTU |
9N50G-TF3-T | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | R5009FNX vs 9N50G-TF3-T |
SIHF8N50D-E3 | Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Intertechnologies | R5009FNX vs SIHF8N50D-E3 |
SIHF8N50D-E3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | R5009FNX vs SIHF8N50D-E3 |
9N50L-TF3-T | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | R5009FNX vs 9N50L-TF3-T |