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Transistors / Power Field-Effect Transistors / SIHF8N50D-E3
Datasheets
SIHF8N50D-E3 by:

Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for SIHF8N50D-E3 by Vishay Intertechnologies

Overview of SIHF8N50D-E3 by Vishay Intertechnologies

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for SIHF8N50D-E3

Part # Distributor Description Stock Price Buy
DISTI # SIHF8N50D-E3
Avnet Americas Trans MOSFET N-CH 500V 8.7A 3-Pin TO-220 Full-Pak - Tape and Reel (Alt: SIHF8N50D-E3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.8198
  • 2,000 $0.7935
  • 4,000 $0.7672
  • 6,000 $0.7361
  • 8,000 $0.7122
  • 10,000 $0.6788
  • 100,000 $0.6453
$0.6453 / $0.8198 Buy Now
DISTI # 78-SIHF8N50D-E3
Mouser Electronics MOSFET 500V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant 828
  • 1 $1.6300
  • 10 $1.3400
  • 100 $1.0400
  • 500 $0.8770
  • 1,000 $0.6990
$0.6990 / $1.6300 Buy Now
DISTI # SIHF8N50D-E3
TTI MOSFET 500V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube Americas - 0
  • 1,000 $0.6900
  • 2,000 $0.6800
  • 5,000 $0.6700
$0.6700 / $0.6900 Buy Now
DISTI # SIHF8N50D-E3
Avnet Americas Trans MOSFET N-CH 500V 8.7A 3-Pin TO-220 Full-Pak - Tape and Reel (Alt: SIHF8N50D-E3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.8198
  • 2,000 $0.7935
  • 4,000 $0.7672
  • 6,000 $0.7361
  • 8,000 $0.7122
  • 10,000 $0.6788
  • 100,000 $0.6453
$0.6453 / $0.8198 Buy Now
DISTI # SIHF8N50D-E3
TME Transistor: N-MOSFET, unipolar, 500V, 5.5A, Idm: 18A, 33W, TO220FP Min Qty: 1 0
  • 1 $1.2600
  • 5 $1.1300
  • 25 $1.0000
  • 100 $0.9000
  • 500 $0.8400
$0.8400 / $1.2600 RFQ
DISTI # SIHF8N50D-E3
EBV Elektronik Trans MOSFET N-CH 500V 8.7A 3-Pin TO-220 Full-Pak (Alt: SIHF8N50D-E3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHF8N50D-E3

SIHF8N50D-E3 CAD Models

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SIHF8N50D-E3 Part Data Attributes:

Parametric Data
SIHF8N50D-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHF8N50D-E3 Vishay Intertechnologies Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-220, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 29 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8.7 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 33 W
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHF8N50D-E3

This table gives cross-reference parts and alternative options found for SIHF8N50D-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF8N50D-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHF8N50D-E3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix SIHF8N50D-E3 vs SIHF8N50D-E3
FQPF9N50CT_NL Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Fairchild Semiconductor Corporation SIHF8N50D-E3 vs FQPF9N50CT_NL
TSM9NB50CIC0 Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220, 3 PIN Taiwan Semiconductor SIHF8N50D-E3 vs TSM9NB50CIC0
AP09N50I-HF TRANSISTOR POWER, FET, FET General Purpose Power Advanced Power Electronics Corp SIHF8N50D-E3 vs AP09N50I-HF
TSM9N50CIC0 Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, ITO-220, 3 PIN Taiwan Semiconductor SIHF8N50D-E3 vs TSM9N50CIC0
FQPF9N50CYDTU Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Fairchild Semiconductor Corporation SIHF8N50D-E3 vs FQPF9N50CYDTU
R5009FNX Power Field-Effect Transistor, 9A I(D), 500V, 0.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN ROHM Semiconductor SIHF8N50D-E3 vs R5009FNX
KF9N50F Power Field-Effect Transistor, 9A I(D), 500V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS(1), 3 PIN KEC SIHF8N50D-E3 vs KF9N50F

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