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Part Details for SIHF8N50D-E3 by Vishay Siliconix
Overview of SIHF8N50D-E3 by Vishay Siliconix
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for SIHF8N50D-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHF8N50D-E3-ND
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DigiKey | MOSFET N-CH 500V 8.7A TO220 Min Qty: 1 Lead time: 20 Weeks Container: Tube | Temporarily Out of Stock |
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$0.5987 / $1.5900 | Buy Now |
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Bristol Electronics | 850 |
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RFQ | ||
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Bristol Electronics | Min Qty: 3 | 50 |
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$0.7031 / $1.8750 | Buy Now |
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Quest Components | 40 |
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$1.2500 / $2.5000 | Buy Now | |
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Quest Components | 680 |
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$0.9900 / $2.4000 | Buy Now |
Part Details for SIHF8N50D-E3
SIHF8N50D-E3 CAD Models
SIHF8N50D-E3 Part Data Attributes:
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SIHF8N50D-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIHF8N50D-E3
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 29 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 8.7 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 33 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHF8N50D-E3
This table gives cross-reference parts and alternative options found for SIHF8N50D-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF8N50D-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQPF9N50CT_NL | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | SIHF8N50D-E3 vs FQPF9N50CT_NL |
| TSM9NB50CIC0 | Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220, 3 PIN | Taiwan Semiconductor | SIHF8N50D-E3 vs TSM9NB50CIC0 |
| AP09N50I-HF | TRANSISTOR POWER, FET, FET General Purpose Power | Advanced Power Electronics Corp | SIHF8N50D-E3 vs AP09N50I-HF |
| TSM9N50CIC0 | Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, ITO-220, 3 PIN | Taiwan Semiconductor | SIHF8N50D-E3 vs TSM9N50CIC0 |
| SIHF8N50D-E3 | Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Intertechnologies | SIHF8N50D-E3 vs SIHF8N50D-E3 |
| FQPF9N50CYDTU | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | SIHF8N50D-E3 vs FQPF9N50CYDTU |
| R5009FNX | Power Field-Effect Transistor, 9A I(D), 500V, 0.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | SIHF8N50D-E3 vs R5009FNX |
| KF9N50F | Power Field-Effect Transistor, 9A I(D), 500V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS(1), 3 PIN | KEC | SIHF8N50D-E3 vs KF9N50F |