Datasheets
IRFD112 by:

800mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Part Details for IRFD112 by Rochester Electronics LLC

Overview of IRFD112 by Rochester Electronics LLC

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Part Details for IRFD112

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IRFD112 Part Data Attributes

IRFD112 Rochester Electronics LLC
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IRFD112 Rochester Electronics LLC 800mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.8 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFD112

This table gives cross-reference parts and alternative options found for IRFD112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFD112 Small Signal Field-Effect Transistor, 0.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Harris Semiconductor IRFD112 vs IRFD112
Part Number Description Manufacturer Compare
BS107ARLRM 250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Motorola Mobility LLC IRFD112 vs BS107ARLRM
BS107ARL1 250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Motorola Mobility LLC IRFD112 vs BS107ARL1
MCH3409 Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MCPH3, 3 PIN SANYO Electric Co Ltd IRFD112 vs MCH3409
2SK1582-A Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NEC Electronics Group IRFD112 vs 2SK1582-A
2N7000 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, TO-92, 3 PIN Rochester Electronics LLC IRFD112 vs 2N7000
934003470215 TRANSISTOR 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors IRFD112 vs 934003470215
TF202 Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SSFP, 3 PIN SANYO Electric Co Ltd IRFD112 vs TF202
BSS131E6433 Small Signal Field-Effect Transistor, 0.1A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Siemens IRFD112 vs BSS131E6433
KSK30OBU N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, TO-92, 3 PIN Rochester Electronics LLC IRFD112 vs KSK30OBU
BS170 Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Siemens IRFD112 vs BS170

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