IRFD112 vs BSS131E6433 feature comparison

IRFD112 Rochester Electronics LLC

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BSS131E6433 Siemens

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC SIEMENS A G
Reach Compliance Code unknown unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 240 V
Drain Current-Max (ID) 0.8 A 0.1 A
Drain-source On Resistance-Max 0.8 Ω 26 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3 R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Feedback Cap-Max (Crss) 5 pF
Reference Standard CECC

Compare IRFD112 with alternatives

Compare BSS131E6433 with alternatives