Part Details for SPB21N50C3 by Infineon Technologies AG
Overview of SPB21N50C3 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPB21N50C3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPB21N50C3ATMA1
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Avnet Americas | Trans MOSFET N-CH 500V 21A 3-Pin TO-263 T/R - Tape and Reel (Alt: SPB21N50C3ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$2.1061 / $2.5742 | Buy Now |
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DISTI #
726-SPB21N50C3
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Mouser Electronics | MOSFET N-Ch 500V 21A D2PAK-2 CoolMOS C3 RoHS: Compliant | 1981 |
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$2.1200 / $4.3000 | Buy Now |
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Chip1Cloud | Trans MOSFET N-CH 500V 21A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 560V 21A TO-263 | 6220 |
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RFQ |
Part Details for SPB21N50C3
SPB21N50C3 CAD Models
SPB21N50C3 Part Data Attributes
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SPB21N50C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPB21N50C3
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 208 W | |
| Pulsed Drain Current-Max (IDM) | 63 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB21N50C3
This table gives cross-reference parts and alternative options found for SPB21N50C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB21N50C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT5019HLL | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN | Advanced Power Technology | SPB21N50C3 vs APT5019HLL |
| SPB21N50C3-E3045A | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPB21N50C3 vs SPB21N50C3-E3045A |
| SPI21N50C3XKSA1 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPB21N50C3 vs SPI21N50C3XKSA1 |
| SPI21N50C3 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPB21N50C3 vs SPI21N50C3 |
| SPP21N50C3HKSA1 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPB21N50C3 vs SPP21N50C3HKSA1 |
| SIHB20N50E-GE3 | Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Vishay Intertechnologies | SPB21N50C3 vs SIHB20N50E-GE3 |
| SIHP20N50E-GE3 | Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPB21N50C3 vs SIHP20N50E-GE3 |
| SPP21N50C3XKSA1 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPB21N50C3 vs SPP21N50C3XKSA1 |