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Transistors / Power Field-Effect Transistors / SIHP20N50E-GE3
Datasheets
SIHP20N50E-GE3 by:

Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Part Details for SIHP20N50E-GE3 by Vishay Intertechnologies

Overview of SIHP20N50E-GE3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SIHP20N50E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 38Y8554
Newark Mosfet, N Channel, 500V, 19A, To220Ab-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:19A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay SIHP20N50E-GE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $1.4600
  • 2,500 $1.3100
$1.3100 / $1.4600 Buy Now
DISTI # SIHP20N50E-GE3
Avnet Americas Trans MOSFET N-CH 500V 19A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP20N50E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.6293
  • 2,000 $1.5770
  • 4,000 $1.5248
  • 6,000 $1.4630
  • 8,000 $1.4155
  • 10,000 $1.3490
  • 100,000 $1.2825
$1.2825 / $1.6293 Buy Now
DISTI # 78-SIHP20N50E-GE3
Mouser Electronics MOSFET 500V Vds 30V Vgs TO-220AB RoHS: Compliant 0
  • 1 $2.8200
  • 10 $2.3500
  • 100 $1.8700
  • 250 $1.7200
  • 500 $1.5600
  • 1,000 $1.3400
  • 2,000 $1.2700
  • 5,000 $1.2200
$1.2200 / $2.8200 Order Now
Future Electronics 500V 19A 0.184 Ohm N-ch TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.2100
  • 2,000 $1.1900
  • 3,000 $1.1800
  • 4,000 $1.1700
$1.1700 / $1.2100 Buy Now
Future Electronics 500V 19A 0.184 Ohm N-ch TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 22 Weeks Container: Tube 0
Tube
  • 50 $1.2100
  • 2,000 $1.1900
  • 3,000 $1.1800
  • 4,000 $1.1700
$1.1700 / $1.2100 Buy Now
DISTI # SIHP20N50E-GE3
TTI MOSFET 500V Vds 30V Vgs TO-220AB RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube Americas - 0
  • 1,000 $1.2200
$1.2200 Buy Now
DISTI # SIHP20N50E-GE3
TME Transistor: N-MOSFET, unipolar, 500V, 12A, Idm: 42A, 179W, TO220AB Min Qty: 1 0
  • 1 $2.7300
  • 5 $2.4600
  • 25 $2.1700
  • 100 $1.9500
  • 500 $1.8200
$1.8200 / $2.7300 RFQ
Chip1Cloud MOSFET N-CH 500V 19A TO220AB 3790
RFQ
DISTI # SIHP20N50E-GE3
EBV Elektronik Trans MOSFET N-CH 500V 19A 3-Pin TO-220AB (Alt: SIHP20N50E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHP20N50E-GE3

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SIHP20N50E-GE3 Part Data Attributes

Parametric Data
SIHP20N50E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHP20N50E-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 22 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 204 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.184 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 42 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHP20N50E-GE3

This table gives cross-reference parts and alternative options found for SIHP20N50E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHP20N50E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT5019HLL Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN Advanced Power Technology SIHP20N50E-GE3 vs APT5019HLL
SPB21N50C3-E3045A Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SIHP20N50E-GE3 vs SPB21N50C3-E3045A
SPI21N50C3XKSA1 Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 Infineon Technologies AG SIHP20N50E-GE3 vs SPI21N50C3XKSA1
SPB21N50C3 Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SIHP20N50E-GE3 vs SPB21N50C3
SPI21N50C3 Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 Infineon Technologies AG SIHP20N50E-GE3 vs SPI21N50C3
SPP21N50C3HKSA1 Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SIHP20N50E-GE3 vs SPP21N50C3HKSA1
SIHB20N50E-GE3 Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 Vishay Intertechnologies SIHP20N50E-GE3 vs SIHB20N50E-GE3
SPP21N50C3XKSA1 Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SIHP20N50E-GE3 vs SPP21N50C3XKSA1

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