Datasheets
SIHB20N50E-GE3 by:

Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2

Part Details for SIHB20N50E-GE3 by Vishay Intertechnologies

Overview of SIHB20N50E-GE3 by Vishay Intertechnologies

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Price & Stock for SIHB20N50E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 38Y8546
Newark Mosfet, N Channel, 500V, 19A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:19A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SIHB20N50E-GE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $1.8600
$1.8600 Buy Now
DISTI # 38Y8547
Newark Mosfet, N Channel, 500V, 19A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:19A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SIHB20N50E-GE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.9500
  • 2,000 $1.8600
  • 4,000 $1.7300
  • 8,000 $1.6100
  • 12,000 $1.5500
  • 20,000 $1.5300
$1.5300 / $1.9500 Buy Now
DISTI # SIHB20N50E-GE3
Avnet Americas Trans MOSFET N-CH 500V 19A 3-Pin D2PAK - Tape and Reel (Alt: SIHB20N50E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.0237
  • 2,000 $1.9588
  • 4,000 $1.8939
  • 6,000 $1.8172
  • 8,000 $1.7582
  • 10,000 $1.6756
  • 100,000 $1.5930
$1.5930 / $2.0237 Buy Now
DISTI # 78-SIHB20N50E-GE3
Mouser Electronics MOSFET 500V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant 960
  • 1 $2.7600
  • 10 $2.4200
  • 25 $2.3400
  • 100 $2.0700
  • 250 $2.0300
  • 500 $1.9500
  • 1,000 $1.6100
  • 2,000 $1.5500
  • 5,000 $1.4600
$1.4600 / $2.7600 Buy Now
Future Electronics MOSFET 500V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Bulk 0
Bulk
  • 1,000 $1.5300
  • 2,000 $1.5100
  • 3,000 $1.4900
$1.4900 / $1.5300 Buy Now
DISTI # SIHB20N50E-GE3
TTI MOSFET 500V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 10000
In Stock
  • 50 $2.3200
  • 100 $2.0500
  • 250 $2.0100
  • 500 $1.9300
  • 1,000 $1.5900
  • 2,000 $1.5300
  • 5,000 $1.4500
$1.4500 / $2.3200 Buy Now
DISTI # SIHB20N50E-GE3
TME Transistor: N-MOSFET, unipolar, 500V, 12A, Idm: 42A, 179W Min Qty: 1 0
  • 1 $3.4100
  • 5 $3.0800
  • 25 $2.7200
  • 100 $2.4400
  • 500 $2.2800
$2.2800 / $3.4100 RFQ
DISTI # SIHB20N50E-GE3
Avnet Asia Trans MOSFET N-CH 500V 19A 3-Pin D2PAK (Alt: SIHB20N50E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # SIHB20N50E-GE3
EBV Elektronik Trans MOSFET N-CH 500V 19A 3-Pin D2PAK (Alt: SIHB20N50E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHB20N50E-GE3

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SIHB20N50E-GE3 Part Data Attributes:

SIHB20N50E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHB20N50E-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 22 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 204 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.184 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 179 W
Pulsed Drain Current-Max (IDM) 42 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 146 ns
Turn-on Time-Max (ton) 88 ns

Alternate Parts for SIHB20N50E-GE3

This table gives cross-reference parts and alternative options found for SIHB20N50E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB20N50E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPB21N50C3 Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SIHB20N50E-GE3 vs SPB21N50C3
SPI21N50C3XKSA1 Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 Infineon Technologies AG SIHB20N50E-GE3 vs SPI21N50C3XKSA1

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