Part Details for SIHB20N50E-GE3 by Vishay Intertechnologies
Overview of SIHB20N50E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHB20N50E-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38Y8546
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Newark | Mosfet, N Channel, 500V, 19A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:19A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SIHB20N50E-GE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.8600 | Buy Now |
DISTI #
38Y8547
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Newark | Mosfet, N Channel, 500V, 19A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:19A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SIHB20N50E-GE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.5300 / $1.9500 | Buy Now |
DISTI #
SIHB20N50E-GE3
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Avnet Americas | Trans MOSFET N-CH 500V 19A 3-Pin D2PAK - Tape and Reel (Alt: SIHB20N50E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$1.5930 / $2.0237 | Buy Now |
DISTI #
78-SIHB20N50E-GE3
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Mouser Electronics | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 960 |
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$1.4600 / $2.7600 | Buy Now |
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Future Electronics | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Bulk | 0Bulk |
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$1.4900 / $1.5300 | Buy Now |
DISTI #
SIHB20N50E-GE3
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TTI | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 10000 In Stock |
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$1.4500 / $2.3200 | Buy Now |
DISTI #
SIHB20N50E-GE3
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TME | Transistor: N-MOSFET, unipolar, 500V, 12A, Idm: 42A, 179W Min Qty: 1 | 0 |
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$2.2800 / $3.4100 | RFQ |
DISTI #
SIHB20N50E-GE3
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Avnet Asia | Trans MOSFET N-CH 500V 19A 3-Pin D2PAK (Alt: SIHB20N50E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
SIHB20N50E-GE3
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EBV Elektronik | Trans MOSFET N-CH 500V 19A 3-Pin D2PAK (Alt: SIHB20N50E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHB20N50E-GE3
SIHB20N50E-GE3 CAD Models
SIHB20N50E-GE3 Part Data Attributes:
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SIHB20N50E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHB20N50E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 204 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 19 A | |
Drain-source On Resistance-Max | 0.184 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 179 W | |
Pulsed Drain Current-Max (IDM) | 42 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 146 ns | |
Turn-on Time-Max (ton) | 88 ns |
Alternate Parts for SIHB20N50E-GE3
This table gives cross-reference parts and alternative options found for SIHB20N50E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB20N50E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SPB21N50C3 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SIHB20N50E-GE3 vs SPB21N50C3 |
SPI21N50C3XKSA1 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SIHB20N50E-GE3 vs SPI21N50C3XKSA1 |