Part Details for R5016FNJTL by ROHM Semiconductor
Overview of R5016FNJTL by ROHM Semiconductor
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for R5016FNJTL
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
R5016FNJTLCT-ND
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DigiKey | MOSFET N-CH 500V 16A LPT Min Qty: 1 Lead time: 28 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
816 In Stock |
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$1.6322 / $2.7000 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$1.8800 | Buy Now |
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Bristol Electronics | 872 |
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RFQ | ||
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Quest Components | 697 |
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$2.1546 / $3.9174 | Buy Now | |
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Quest Components | 80 |
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$3.4373 / $5.5740 | Buy Now | |
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Ameya Holding Limited | MOSFET N-CH 500V 16A LPT Min Qty: 1 | 100-Authorized Distributor |
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$2.5088 / $4.2650 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2015 Date Code: 2015 | 100 |
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$1.8580 / $2.8230 | Buy Now |
Part Details for R5016FNJTL
R5016FNJTL CAD Models
R5016FNJTL Part Data Attributes:
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R5016FNJTL
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R5016FNJTL
ROHM Semiconductor
Power Field-Effect Transistor, 16A I(D), 500V, 0.325ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, 3/2 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | LPTS, 3/2 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 17.1 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.325 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 64 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for R5016FNJTL
This table gives cross-reference parts and alternative options found for R5016FNJTL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R5016FNJTL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXTH450P2 | Power Field-Effect Transistor, 16A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | R5016FNJTL vs IXTH450P2 |
IXTP450P2 | Power Field-Effect Transistor, 16A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IXYS Corporation | R5016FNJTL vs IXTP450P2 |
IXFP16N50P3 | Power Field-Effect Transistor, | Littelfuse Inc | R5016FNJTL vs IXFP16N50P3 |
IXTP450P2 | Power Field-Effect Transistor, | Littelfuse Inc | R5016FNJTL vs IXTP450P2 |
IXFP16N50P3 | Power Field-Effect Transistor, 16A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IXYS Corporation | R5016FNJTL vs IXFP16N50P3 |
APT5030AVR | Power Field-Effect Transistor, 14.7A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN | Advanced Power Technology | R5016FNJTL vs APT5030AVR |
APT5030AVR | 14.7A, 500V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, TO-3, 2 PIN | Microsemi Corporation | R5016FNJTL vs APT5030AVR |
IXTH450P2 | Power Field-Effect Transistor, | Littelfuse Inc | R5016FNJTL vs IXTH450P2 |