Part Details for APT5030AVR by Advanced Power Technology
Overview of APT5030AVR by Advanced Power Technology
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for APT5030AVR
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 45 |
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$10.0348 / $12.2045 | Buy Now | |
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Chip1Cloud | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 5200 |
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RFQ |
Part Details for APT5030AVR
APT5030AVR CAD Models
APT5030AVR Part Data Attributes:
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APT5030AVR
Advanced Power Technology
Buy Now
Datasheet
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Compare Parts:
APT5030AVR
Advanced Power Technology
Power Field-Effect Transistor, 14.7A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
Package Description | FLANGE MOUNT, O-MBFM-P2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 960 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 14.7 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-204AE | |
JESD-30 Code | O-MBFM-P2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 58.8 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for APT5030AVR
This table gives cross-reference parts and alternative options found for APT5030AVR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT5030AVR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXTQ450P2 | Power Field-Effect Transistor, | Littelfuse Inc | APT5030AVR vs IXTQ450P2 |
IXTH450P2 | Power Field-Effect Transistor, | Littelfuse Inc | APT5030AVR vs IXTH450P2 |
APT5030AVR | 14.7A, 500V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, TO-3, 2 PIN | Microsemi Corporation | APT5030AVR vs APT5030AVR |
IXTH450P2 | Power Field-Effect Transistor, 16A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | APT5030AVR vs IXTH450P2 |
IXTP450P2 | Power Field-Effect Transistor, 16A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IXYS Corporation | APT5030AVR vs IXTP450P2 |
IXTQ450P2 | Power Field-Effect Transistor, 16A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXYS Corporation | APT5030AVR vs IXTQ450P2 |
IXFP16N50P3 | Power Field-Effect Transistor, | Littelfuse Inc | APT5030AVR vs IXFP16N50P3 |
R5016FNJTL | Power Field-Effect Transistor, 16A I(D), 500V, 0.325ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, 3/2 PIN | ROHM Semiconductor | APT5030AVR vs R5016FNJTL |