Part Details for IXTH30N45 by IXYS Corporation
Overview of IXTH30N45 by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IXTH30N45
IXTH30N45 CAD Models
IXTH30N45 Part Data Attributes:
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IXTH30N45
IXYS Corporation
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Datasheet
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IXTH30N45
IXYS Corporation
Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 450 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.16 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 360 W | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTH30N45
This table gives cross-reference parts and alternative options found for IXTH30N45. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH30N45, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APT6029SLLG | Power Field-Effect Transistor, 21A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXTH30N45 vs APT6029SLLG |
IXFX30N50Q | Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXYS Corporation | IXTH30N45 vs IXFX30N50Q |
APT5015BVRG | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | IXTH30N45 vs APT5015BVRG |
APT5020BLC | 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | IXTH30N45 vs APT5020BLC |
IXTH30N45S | Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN | IXYS Corporation | IXTH30N45 vs IXTH30N45S |
IXFQ26N50Q | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXYS Corporation | IXTH30N45 vs IXFQ26N50Q |
IXTH30N45S | Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN | Littelfuse Inc | IXTH30N45 vs IXTH30N45S |
APT5020SLC | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | Advanced Power Technology | IXTH30N45 vs APT5020SLC |
APT5015SVFRG | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXTH30N45 vs APT5015SVFRG |
APT5015BVR | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microsemi Corporation | IXTH30N45 vs APT5015BVR |