Parametric results for: dta114e under Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BAIS RESISTOR RATIO IS 1 1 BUILT IN BIAS RESISTANCE RATIO IS 1 32 BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY 2 BUILT IN BIAS RESISTANCE RATIO IS 1.0 1 BUILT IN BIAS RESISTANCE RATIO IS 1; HIGH RELIABILITY 2 BUILT IN BIAS RESISTOR RATIO 1 2 BUILT IN BIAS RESISTOR RATIO IS 1 13 BUILT-IN BIAS RESISTANCE RATIO IS 1 3 BUILT-IN BIAS RESISTOR RATIO 1 3 BUILT-IN BIAS RESISTOR RATIO IS 1 116 BUILT-IN BIAS RESISTOR RATIO IS 1, DIGITAL 1 BUILT-IN BIAS RESISTOR RATIO IS 1.0 1 DIGITAL, BUILT IN BIAS RESISTOR RATIO 1 4 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 10

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COLLECTOR 21

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Collector Current-Max (IC) (2)

50 mA 48 100 mA 169

Min (A) - Max (A)

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3 pF 4 5 pF 7

Min (pF) - Max (pF)

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Collector-Emitter Voltage-Max (1)

50 V 167

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Configuration (3)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 1 SINGLE 2 SINGLE WITH BUILT-IN RESISTOR 188

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DC Current Gain-Min (hFE) (4)

20.0 2 30.0 195 35.0 17 68.0 9

Min - Max

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TO-236 5 TO-236AB 10 TO-263AB 2 TO-92 14

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O-PBCY-T3 15 R-PBCC-N3 7 R-PDSO-F3 19 R-PDSO-G3 127 R-PDSO-G6 1 R-PDSO-N3 3 R-PSIP-T3 19

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e0 33 e1 15 e2 2 e3 92

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Manufacturer (27)

CHENMKO Enterprise Co Ltd 1 Comchip Technology Corporation Ltd 1 Diodes Incorporated 19 Galaxy Microelectronics 9 Galaxy Semi-Conductor Co Ltd 3 Jiangsu Changjiang Electronics Technology Co Ltd 6 LRC Leshan Radio Co Ltd 11 Micro Commercial Components 23 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 Nexperia 35 NXP Semiconductors 33 onsemi 11 Philips Semiconductors 7 Rectron Semiconductor 7 Rochester Electronics LLC 2 ROHM Semiconductor 65 Secos Corporation 9 SY Sinyork Co Ltd 2 Taiwan Semiconductor 20 Tak Cheong Electronics (Holdings) Co Ltd 1 TDK Corporation 1 TDK Micronas GmbH 1 Toshiba America Electronic Components 3 Unisonic Technologies Co Ltd 24 WEITRON INTERNATIONAL CO., LTD. 2 Yangzhou Yangjie Electronics Co Ltd 3

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1 99 NOT SPECIFIED 1

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Number of Elements (2)

1 224 2 1

Min - Max

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Number of Terminals (2)

3 190 6 1

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150.0 °C 90

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-65.0 °C 11 -55.0 °C 2

Min (°C) - Max (°C)

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PLASTIC/EPOXY 191

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RECTANGULAR 176 ROUND 15

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CHIP CARRIER 7 CYLINDRICAL 15 IN-LINE 19 SMALL OUTLINE 150

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Active 144 Contact Manufacturer 16 End Of Life 4 Not Recommended 8 Obsolete 99 Transferred 30

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No 7 Yes 40

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235 5 240 3 260 94 NOT SPECIFIED 54

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Polarity/Channel Type (2)

NPN 4 PNP 220

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150 mW 12 200 mW 18 300 mW 3

Min (W) - Max (W)

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150 mW 23 200 mW 46 250 mW 18 300 mW 18 330 mW 2 350 mW 4 500 mW 2 600 mW 2 200 W 1

Min (W) - Max (W)

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Surface Mount (2)

NO 42 YES 185

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Transition Frequency-Nom (fT) (3)

100 MHz 12 180 MHz 15 250 MHz 119

Min (MHz) - Max (MHz)

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