Parametric results for: com35%2f6 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 2

3 hits Apply

ISOLATED 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

400 V 2

3 hits Apply

Drain Current-Max (ID) (1)

13 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

320 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

TO-254AA 2

3 hits Apply

S-MSFM-P3 2

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

Infineon Technologies AG 1 Omnirel Corp 1 Ortus Technology Co 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

70.0 °C 1 150.0 °C 1

Min (°C) - Max (°C)

3 hits Apply

-20.0 °C 1

3 hits Apply

METAL 2

3 hits Apply

SQUARE 2

3 hits Apply

FLANGE MOUNT 2

3 hits Apply

Contact Manufacturer 1 Obsolete 1 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

125 W 1

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply