Parametric results for: NTE2512 under RF Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

500 mA 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

60 V 1

1 hit Apply

Configuration (1)

SINGLE 1

1 hit Apply

DC Current Gain-Min (hFE) (1)

20.0 1

1 hit Apply

R-PSFM-W3 1

1 hit Apply

Manufacturer (1)

NTE Electronics Inc 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Active 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

PNP 1

1 hit Apply

1.2 W 1

1 hit Apply

10 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply

Transition Frequency-Nom (fT) (1)

800 MHz 1

1 hit Apply