Datasheets
NTE2512 by: NTE Electronics Inc

RF Power Bipolar Transistor, 1-Element, Silicon, PNP,

Part Details for NTE2512 by NTE Electronics Inc

Overview of NTE2512 by NTE Electronics Inc

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Applications Telecommunications Automotive

Price & Stock for NTE2512

Part # Distributor Description Stock Price Buy
Onlinecomponents.com Transistor PNP Silicon 80V IC=0.5A TO-126 Case Video Output For HDTV Compl To NTE2511 RoHS: Compliant 29 In Stock
  • 10 $3.3100
  • 100 $2.6300
  • 250 $2.5500
  • 500 $2.4800
  • 1,000 $2.3500
  • 2,500 $2.2800
  • 5,000 $2.2400
  • 7,500 $2.1600
$2.1600 / $3.3100 Buy Now
Bristol Electronics   2
RFQ
Quest Components   1
  • 1 $6.0000
$6.0000 Buy Now
DISTI # NTE2512
TME Transistor: PNP, bipolar, 60V, 0.5A, 10W, TO126 Min Qty: 1 0
  • 1 $3.5100
  • 3 $3.1600
  • 10 $2.7900
  • 25 $2.5100
$2.5100 / $3.5100 RFQ
Master Electronics Transistor PNP Silicon 80V IC=0.5A TO-126 Case Video Output For HDTV Compl To NTE2511 RoHS: Compliant 29 In Stock
  • 10 $3.3100
  • 100 $2.6300
  • 250 $2.5500
  • 500 $2.4800
  • 1,000 $2.3500
  • 2,500 $2.2800
  • 5,000 $2.2400
  • 7,500 $2.1600
$2.1600 / $3.3100 Buy Now

Part Details for NTE2512

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NTE2512 Part Data Attributes

NTE2512 NTE Electronics Inc
Buy Now Datasheet
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NTE2512 NTE Electronics Inc RF Power Bipolar Transistor, 1-Element, Silicon, PNP,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Package Description FLANGE MOUNT, R-PSFM-W3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.5 A
Configuration SINGLE
DC Current Gain-Min (hFE) 20
JESD-30 Code R-PSFM-W3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 10 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form WIRE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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