Parametric results for: NDP606A under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 4

11 hits Apply

Configuration (2)

SINGLE 7 SINGLE WITH BUILT-IN DIODE 4

11 hits Apply

DS Breakdown Voltage-Min (2)

20 V 1 60 V 10

Min (V) - Max (V)

11 hits Apply

Drain Current-Max (ID) (2)

24 A 1 48 A 10

Min (A) - Max (A)

11 hits Apply

Drain-source On Resistance-Max (1)

25 mΩ 8

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

400 pF 4

11 hits Apply

TO-220AB 8

11 hits Apply

R-PSFM-T3 8

11 hits Apply

e0 6

11 hits Apply

Manufacturer (3)

National Semiconductor Corporation 4 New Jersey Semiconductor Products Inc 3 Texas Instruments 4

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

3 8

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

175.0 °C 6

11 hits Apply

PLASTIC/EPOXY 8

11 hits Apply

RECTANGULAR 8

11 hits Apply

FLANGE MOUNT 8

11 hits Apply

Active 2 Contact Manufacturer 1 Obsolete 6 Transferred 2

11 hits Apply

No 2

11 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 10 P-CHANNEL 1

11 hits Apply

100 W 8

11 hits Apply

100 W 6

11 hits Apply

Surface Mount (1)

NO 8

11 hits Apply