Parametric results for: MTP8P10 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LEADFORM OPTIONS ARE AVAILABLE 3

35 hits Apply

DRAIN 35

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Configuration (3)

SINGLE 32 Single 1 SINGLE WITH BUILT-IN DIODE 2

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DS Breakdown Voltage-Min (1)

100 V 35

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Drain Current-Max (Abs) (ID) (1)

8 A 1

35 hits Apply

Drain Current-Max (ID) (1)

8 A 35

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Drain-source On Resistance-Max (1)

400 mΩ 35

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METAL-OXIDE SEMICONDUCTOR 35

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180 pF 3

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TO-220AB 35

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R-PSFM-T3 35

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e0 3

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Manufacturer (3)

Freescale Semiconductor 1 Motorola Mobility LLC 17 Motorola Semiconductor Products 17

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Number of Elements (1)

1 35

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Number of Terminals (1)

3 35

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ENHANCEMENT MODE 35

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150.0 °C 3

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-65.0 °C 2

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PLASTIC/EPOXY 35

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RECTANGULAR 35

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FLANGE MOUNT 35

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Obsolete 35

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

P-CHANNEL 35

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60 W 32 75 W 3

Min (W) - Max (W)

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75 W 3

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Surface Mount (1)

NO 35

35 hits Apply