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Parametric results for: MB89R112B1QN-G-AMEFE1 under Other Memory ICs

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Manufacturer Part Number: mb89r112b1qngamefe1
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MB89R112B1QN-G-AMEFE1
 FUJITSU Semiconductor Limited 		Check for Price Yes Contact Manufacturer 73.728 kbit 8 9KX8 3.3 V 2 MHz FRAM-EMBEDDED DATA RETENTION TIME @ 85 DEGREE CENTIGRADE 10 1000000000000 Write/Erase Cycles 1 9000 9.216 k SERIAL SPI 48 µA 3 V 500 nA 3.6 V 3 V CMOS S-PQCC-N24 85 °C -20 °C 24 PLASTIC/EPOXY HVQCCN LCC24,.2SQ,20 SQUARE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE YES NO LEAD 500 µm QUAD 750 µm 4 mm 4 mm FUJITSU LTD QFN HVQCCN, 24 compliant EAR99 8542.32.00.71
MB89R112B1QN-G-AMEFE1
 FUJITSU Limited 		Check for Price Yes Contact Manufacturer 73.728 kbit 8 9KX8 3.3 V 2 MHz FRAM-EMBEDDED DATA RETENTION TIME @ 85 DEGREE CENTIGRADE 10 1000000000000 Write/Erase Cycles 1 9000 9.216 k SERIAL SPI 48 µA 3 V 500 nA 3.6 V 3 V CMOS S-PQCC-N24 85 °C -20 °C 24 PLASTIC/EPOXY HVQCCN LCC24,.2SQ,20 SQUARE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE YES NO LEAD 500 µm QUAD 750 µm 4 mm 4 mm FUJITSU LTD HVQCCN, compliant EAR99 8542.32.00.71