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K4B1G0446E-HCF8T
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 150 ps | 533 MHz | 8192 | DDR3 DRAM | COMMON | 4,8 | 256000000 | 268.4355 M | 3-STATE | 4,8 | 180 µA | CMOS | R-PBGA-B78 | Not Qualified | e1 | 3 | 260 | 78 | PLASTIC/EPOXY | FBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.32 | |||||||||||||||||||
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K4B1G0446E-HCK0
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 100 ps | 800 MHz | 8192 | DDR3 DRAM | COMMON | 4,8 | 256000000 | 268.4355 M | 3-STATE | 4,8 | CMOS | R-PBGA-B78 | Not Qualified | e1 | 3 | 260 | 78 | PLASTIC/EPOXY | FBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.32 | |||||||||||||||||||
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K4B1G0446E-HCH9T
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 125 ps | 667 MHz | 8192 | DDR3 DRAM | COMMON | 4,8 | 256000000 | 268.4355 M | 3-STATE | 4,8 | 225 µA | CMOS | R-PBGA-B78 | Not Qualified | e1 | 3 | 260 | 78 | PLASTIC/EPOXY | FBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.32 | |||||||||||||||||||
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K4B1G0446E-HCK00
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 225 ps | 800 MHz | 8192 | MULTI BANK PAGE BURST | DDR3 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 1.575 V | 1.425 V | CMOS | OTHER | R-PBGA-B78 | Not Qualified | e1 | 3 | 95 °C | 260 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.32 | BGA | TFBGA, BGA78,9X13,32 | 78 | ||||
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K4B1G0446E-HCH9
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 125 ps | 667 MHz | 8192 | DDR3 DRAM | COMMON | 4,8 | 256000000 | 268.4355 M | 3-STATE | 4,8 | 225 µA | CMOS | R-PBGA-B78 | Not Qualified | e1 | 3 | 260 | 78 | PLASTIC/EPOXY | FBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.32 | ||||||||||||||||||
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K4B1G0446E
Samsung Semiconductor
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Check for Price | Obsolete | DDR DRAM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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K4B1G0446E-HCF80
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 300 ps | 533 MHz | 8192 | MULTI BANK PAGE BURST | DDR3 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 180 µA | 1.575 V | 1.425 V | CMOS | OTHER | R-PBGA-B78 | Not Qualified | e1 | 3 | 95 °C | 260 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.32 | BGA | TFBGA, BGA78,9X13,32 | 78 | |||
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K4B1G0446E-HCF7
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 200 ps | 400 MHz | 8192 | DDR3 DRAM | COMMON | 4,8 | 256000000 | 268.4355 M | 3-STATE | 4,8 | 170 µA | CMOS | R-PBGA-B78 | Not Qualified | 3 | 260 | 78 | PLASTIC/EPOXY | FBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.32 | FBGA, BGA78,9X13,32 | |||||||||||||||||||
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K4B1G0446E-HCH90
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 255 ps | 667 MHz | 8192 | MULTI BANK PAGE BURST | DDR3 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 225 µA | 1.575 V | 1.425 V | CMOS | OTHER | R-PBGA-B78 | Not Qualified | e1 | 3 | 95 °C | 260 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.32 | BGA | TFBGA, BGA78,9X13,32 | 78 | |||
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K4B1G0446E-HCF70
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR3 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 170 µA | 1.575 V | 1.425 V | CMOS | OTHER | R-PBGA-B78 | Not Qualified | 3 | 95 °C | 260 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.32 | BGA | TFBGA, BGA78,9X13,32 | 78 |