Part Details for K4B1G0446E-HCF80 by Samsung Semiconductor
Overview of K4B1G0446E-HCF80 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for K4B1G0446E-HCF80
K4B1G0446E-HCF80 CAD Models
K4B1G0446E-HCF80 Part Data Attributes
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K4B1G0446E-HCF80
Samsung Semiconductor
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Datasheet
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K4B1G0446E-HCF80
Samsung Semiconductor
DDR DRAM, 256MX4, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA78,9X13,32 | |
| Pin Count | 78 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.3 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 533 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B78 | |
| JESD-609 Code | e1 | |
| Length | 11 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR3 DRAM | |
| Memory Width | 4 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 78 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 95 °C | |
| Operating Temperature-Min | ||
| Organization | 256MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA78,9X13,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Supply Current-Max | 0.18 mA | |
| Supply Voltage-Max (Vsup) | 1.575 V | |
| Supply Voltage-Min (Vsup) | 1.425 V | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 7.5 mm |
Alternate Parts for K4B1G0446E-HCF80
This table gives cross-reference parts and alternative options found for K4B1G0446E-HCF80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4B1G0446E-HCF80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT41J512M4THV-15:F | DDR DRAM, 256MX4, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | K4B1G0446E-HCF80 vs MT41J512M4THV-15:F |
| MT41J256M4HX-125E:D | DDR DRAM, 256MX4, 0.1ns, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | K4B1G0446E-HCF80 vs MT41J256M4HX-125E:D |
| MT41J256M4HX-25:B | DDR DRAM, 256MX4, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | K4B1G0446E-HCF80 vs MT41J256M4HX-25:B |
| K4B2G0446C-HCH90 | DDR DRAM, 512MX4, 0.25ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | Samsung Semiconductor | K4B1G0446E-HCF80 vs K4B2G0446C-HCH90 |
| NT5CB512M4BN-CF | DDR DRAM, 512MX4, 0.255ns, CMOS, PBGA78, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-78 | Nanya Technology Corporation | K4B1G0446E-HCF80 vs NT5CB512M4BN-CF |
| H5TQ2G43BMR-G7C | DDR DRAM, 512MX4, CMOS, PBGA78, FBGA-78 | SK Hynix Inc | K4B1G0446E-HCF80 vs H5TQ2G43BMR-G7C |
| H5TQ2G43AMP-G7C | DDR DRAM, 512MX4, CMOS, PBGA78, FBGA-78 | SK Hynix Inc | K4B1G0446E-HCF80 vs H5TQ2G43AMP-G7C |
| MT41J256M4HX-25IT:D | DDR DRAM, 256MX4, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | K4B1G0446E-HCF80 vs MT41J256M4HX-25IT:D |
| H5TQ1G43AFPR-G8C | DDR DRAM, 256MX4, CMOS, PBGA78, HALOGEN FREE, FBGA-78 | SK Hynix Inc | K4B1G0446E-HCF80 vs H5TQ1G43AFPR-G8C |
| MT41J256M4HX-187EIT:B | DDR DRAM, 256MX4, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | K4B1G0446E-HCF80 vs MT41J256M4HX-187EIT:B |