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IRFR120NTRPBF
International Rectifier
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$0.2035 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-252AA | LEAD FREE, PLASTIC, DPAK-2/3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | |||||
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IRFR120NPBF
International Rectifier
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$0.2161 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-252AA | LEAD FREE, PLASTIC, DPAK-2/3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | |||||
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IRFR120ZPBF
International Rectifier
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$0.2480 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.7 A | 190 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 18 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 35 W | 35 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-252AA | LEAD FREE, PLASTIC, DPAK-3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | |||||
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IRFR120NPBF
Infineon Technologies AG
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$0.4429 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | ||||||||
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IRFR120ZTRPBF
International Rectifier
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$0.4798 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.7 A | 190 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 18 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 35 W | 35 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-252AA | LEAD FREE, PLASTIC, DPAK-3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | |||||
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IRFR120NTRLPBF
Infineon Technologies AG
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$0.5038 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon | |||||||
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IRFR120NTRPBF
Infineon Technologies AG
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$0.5203 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | ||||||||
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IRFR120PBF
Vishay Intertechnologies
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$0.5271 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | 34 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | TO-252AA | 3 | not_compliant | EAR99 | Vishay | ||||
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IRFR120ZPBF
Infineon Technologies AG
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$0.6370 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.7 A | 190 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 18 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 35 W | 35 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | ||||||||
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IRFR1205TRPBF
Infineon Technologies AG
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$0.7038 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 20 A | 27 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 107 W | 160 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon |