Filter Your Search
1 - 10 of 96 results
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IRFR120NTRPBF
International Rectifier
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IRFR120NPBF
International Rectifier
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IRFR120ZTRPBF
Infineon Technologies AG
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IRFR120NPBF
Infineon Technologies AG
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IRFR120NTRPBF
Infineon Technologies AG
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IRFR120PBF
Vishay Intertechnologies
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IRFR1205TRPBF
Infineon Technologies AG
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IRFR120TRPBF
Vishay Intertechnologies
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IRFR120TRLPBF
International Rectifier
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IRFR120
Fairchild Semiconductor Corporation
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| Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Polarity/Channel Type |
Surface Mount
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Configuration |
Number of Terminals
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DS Breakdown Voltage-Min
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Number of Elements |
Drain Current-Max (ID)
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Drain-source On Resistance-Max
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Additional Feature
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Avalanche Energy Rating (Eas)
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Feedback Cap-Max (Crss)
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FET Technology |
Operating Mode
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Power Dissipation Ambient-Max
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Power Dissipation-Max (Abs)
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Pulsed Drain Current-Max (IDM)
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Transistor Application
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Transistor Element Material
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JEDEC-95 Code
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JESD-30 Code
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JESD-609 Code
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Qualification Status
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Moisture Sensitivity Level
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Time@Peak Reflow Temperature-Max (s)
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Case Connection
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Package Body Material
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Package Shape
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Package Style
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Terminal Finish
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Terminal Form
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Terminal Position
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Ihs Manufacturer
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Part Package Code
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Package Description
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Pin Count
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Reach Compliance Code
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ECCN Code
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HTS Code
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Samacsys Manufacturer
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| Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-252AA | LEAD FREE, PLASTIC, DPAK-2/3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | |||||
| Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-252AA | LEAD FREE, PLASTIC, DPAK-2/3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | |||||
| Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.7 A | 190 mΩ | 18 mJ | 24 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 35 W | 35 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | DPAK-3/2 | not_compliant | EAR99 | Infineon | |||||||
| Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | ||||||||
| Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | ||||||||
| Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | 34 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | TO-252AA | 3 | not_compliant | EAR99 | Vishay | ||||
| Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 20 A | 27 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 107 W | 160 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | |||||||||
| Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | 34 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | not_compliant | EAR99 | Vishay | |||||||
| Yes | Transferred | N-CHANNEL | YES | SINGLE | 2 | 100 V | 1 | 7.7 A | 270 mΩ | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 42 W | 31 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | 8541.29.00.95 | |||||||||
| No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.4 A | 270 mΩ | 36 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 34 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e0 | Not Qualified | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | unknown | EAR99 |
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IRFR120NTRPBF
International Rectifier
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$0.2035 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-252AA | LEAD FREE, PLASTIC, DPAK-2/3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | ||||||
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IRFR120NPBF
International Rectifier
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$0.2161 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-252AA | LEAD FREE, PLASTIC, DPAK-2/3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | ||||||
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IRFR120ZTRPBF
Infineon Technologies AG
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$0.2663 | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.7 A | 190 mΩ | 18 mJ | 24 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 35 W | 35 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | DPAK-3/2 | not_compliant | EAR99 | Infineon | ||||||||
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IRFR120NPBF
Infineon Technologies AG
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$0.4030 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | |||||||||
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IRFR120NTRPBF
Infineon Technologies AG
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$0.4639 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | |||||||||
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IRFR120PBF
Vishay Intertechnologies
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$0.5771 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | 34 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | TO-252AA | 3 | not_compliant | EAR99 | Vishay | |||||
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IRFR1205TRPBF
Infineon Technologies AG
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$0.6904 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 20 A | 27 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 107 W | 160 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | ||||||||||
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IRFR120TRPBF
Vishay Intertechnologies
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$0.9287 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | 34 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | not_compliant | EAR99 | Vishay | ||||||||
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IRFR120TRLPBF
International Rectifier
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE | 2 | 100 V | 1 | 7.7 A | 270 mΩ | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 42 W | 31 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | 8541.29.00.95 | ||||||||||
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IRFR120
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.4 A | 270 mΩ | 36 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 34 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e0 | Not Qualified | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | unknown | EAR99 |